In-situ monitoring system of the position and temperature at the crystal–solution interface

Properties and structure of vitreous silica. I

R. Brückner · Journal of Non-Crystalline Solids · 1970 · 881 citations

Materials Science, Materials Engineering, Silicate Ceramics +5

Growth of Ge-rich Si Ge1− single crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells

Kazuo Nakajima, Shigeo Kodama, Satoru Miyashita et al. · Journal of Crystal Growth · 1999 · 56 citations

Materials Science, Engineering, Crystal Growth Technology +9

Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal–melt interface using in situ monitoring system

Yukinaga Azuma, Noritaka Usami, Toru Ujihara et al. · Journal of Crystal Growth · 2001 · 45 citations

Materials Science, Engineering, Crystal–melt Interface +8

Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method

Shigeo Kodama, Y. Furumura, Kyôichi Kinoshita et al. · Journal of Crystal Growth · 2000 · 26 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +8

Real-time measurement of LPE growth rate in GaP

Yuko Inatomi, K. Kuribayashi · Journal of Crystal Growth · 1991 · 11 citations

Measurement, Real-time Measurement, Business +5