Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 13 citations · 9 references
EngineeringElectron-beam LithographyEmission UniformityElectron DiffractionElectrical FieldElectron OpticActive Emission SitesSemiconductor DeviceElectronic DevicesElectron SpectroscopyNanoelectronicsElectron-beam ResistInstrumentationCarbon NanotubesCompound SemiconductorElectrical EngineeringPhysicsNanotechnologyElectron EmissionPhotoelectric MeasurementElectronic MaterialsApplied PhysicsElectron MicroscopeUniformity Measurement
The field-emission sites’ distribution was measured to monitor the emission uniformity from randomly oriented carbon-nanotube (CNT) emitters using electron-beam resists (ER). The dot-patterned CNT emitters were fabricated by screen-printing a photoimageable CNT paste on an indium doped tin oxide (ITO) coated glass plate. An ER-coated Si substrate used as an anode provides the detection of the location and amount of the electron emission from the partial number of active emission sites among many existing CNTs. The measurements were carried out with the variation of electrical fields through continuous- or pulsed-voltage applications on a diode-type configuration. Developed ER images after a similar dosage of field-emission current flow indicate that emission uniformity is improved as the electrical field is increased. This method suggests that the emission uniformity could be estimated for various conditions of emitter preparation, such as CNT type, paste composition, and dispersion process, as well as the variation of the electrical field, the existence of a resistive layer, and so on.
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