Lifetime Measurements in Si II, Si III, and Si IV

Abstract

We have measured radiative decay times in Si II, Si III, and Si IV in the wavelength region 700-6 000 Å using the beam-foil technique. The lifetimes and transition probabilities have been evaluated by alternative methods of curve-fitting and cascade analysis. These results are compared with theoretical transition probabilities, and values in other members of the isoelectronic sequences.