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Deposition of MSe (M = Cd, Zn) Filmsby LP-MOCVD from Novel Single-Source Precursors M[(SePPh2)2N]2
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2002
Year
EngineeringElectron Microscopy RevealsThin Film Process TechnologyChemistryChemical DepositionSemiconductorsDeposited FilmsIi-vi SemiconductorFilmsby Lp-mocvdCompound SemiconductorThin Film ProcessingMaterials EngineeringMaterials ScienceZnse FilmsSurface ScienceApplied PhysicsThin FilmsChemical Vapor DepositionSolar Cell Materials
CdSe and ZnSe films have been deposited from novel single-source precursors M[(SePPh2)2N]2 (M = Cd or Zn) by LP-MOCVD. The precursors are air stable and start to evaporate at 375 °C. The CdSe and ZnSe films deposited on glass are polycrystalline and of hexagonal phase. Scanning electron microscopy reveals dense films (see Figure) and energy dispersive X-ray analysis indicates that the stoichiometry of the deposited films is close to 1:1.