Publication | Closed Access
Epitaxial Growth of Aligned Semiconductor Nanowire Metamaterials for Photonic Applications
62
Citations
31
References
2008
Year
Optical MaterialsEngineeringMetasurfacesMetamaterialsOptoelectronic DevicesElectromagnetic MetamaterialsQuantum MetamaterialsOptical PropertiesEpitaxial GrowthNanophotonicsMaterials SciencePhysicsNanowire MetamaterialsPhotonic MaterialsMetaopticsOptical SensorsPlasmonicsDifferent Nanowire OrientationsApplied PhysicsNanofabricationDynamic MetamaterialsPolarization Interferometry
Abstract A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal‐organic vapor phase‐epitaxy. Starting from a gold island film as a catalyst for nanowire growth, a sequential combination of vapor–liquid–solid and lateral growth modes is employed to obtain a continuous tunability of the nanowire volume fraction from 7% to over 35%. By choosing different crystallographic orientations of the GaP substrate, metamaterials are designed with different nanowire orientations. The anisotropy of the nanowire building blocks results in strong optical birefringence. Polarization interferometry demonstrates a very large polarization extinction contrast of 4 × 10 3 combined with a sharp angular resonance which holds promise for optical sensing. Nanowire metamaterials may find applications in photonics, optoelectronics, non‐linear and quantum optics, microfluidics, bio‐, and gas sensing.
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