Transport properties in HgI2

G. M. Martin, P. Bach, P. Guétin

Applied Physics Letters · 1974 · 28 citations · 1 references

Concepts

Abstract

Time-of-flight measurements have been performed on HgI2. The electron drift mobility varies between 55 and 75 cm2/V s for fields E ≤20 kV/cm. The plot of the electron drift velocity versus E exhibits a maximum for E ∼80 kV/cm; beyond this value the differential mobility becomes negative (∼−5 cm2/V s). an electron trapping time τe+ is found larger than 100 ns. Our measurements also yield estimations of the hole mobility and of the hole trapping time.

References

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