Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation

Abstract

ZnSSe epilayers were grown by MBE with light irradiation using a Hg-Xe lamp. The free-exciton-emission intensities increased in the photoluminescence spectra of the light-irradiated epilayers, and the sulfur composition also increased. However, the surface morphologies were rough. The irradiated-photon-energy dependence of the above irradiation effects was investigated for the first time, and it turned out that the photons of energy larger than the band-gap energy of the epilayer were responsible for the light-irradiation effects.