Carrier lifetimes in MBE and MOCVD InGaAs quantum wells

Abstract

Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 mu m. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6*1017 cm-3.