Applied Physics Letters · 1997 · 17 citations · 12 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsNanoelectronicsQuantum Well DevicesQuantum WellsSemiconductor PhysicsTwo-dimensional SemiconductorsWide Band Gap SemiconductorsConductanceConductance Measurement TechniquesHeterostructure DevicesMetalorganic Vapor Phase EpitaxyQuantum Well HeterostructuresQuantum Well StructuresReactive Ion EtchingTwo-dimensional Electron Gases
Clear conductance quantization at T=4.2 K has been demonstrated in a 140 nm wide and 200 nm long trench-isolated In0.53Ga0.47As/InP electron waveguide with in-plane gates, using the surrounding two-dimensional electron gas as the gate. It was fabricated using metalorganic vapor phase epitaxy, electron beam lithography, and CH4/H2 reactive ion etching. In a T=20 K measurement on a 60 nm wide and 100 nm long device, only the first conductance plateau of 2e2/h was reached.
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Quantized conductance of point contacts in a two-dimensional electron gas
B. J. van Wees, H. van Houten, C. W. J. Beenakker et al. · Physical Review Letters · 1988 · 3.1K citations · Full text
Analysis of an electron-wave Y-branch switch
Thomas Palm, L. Thylén · Applied Physics Letters · 1992 · 113 citations