Applied Physics Letters · 1993 · 71 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesPhotonic Integrated CircuitsSemiconductor LasersCurrent InjectionDoped SemiconductorsExternal Cavity Laser DiodesExternal-cavity LasersHigh-power Laser DiodesHigh-power Semiconductor LasersSemiconductor Laser DiodesUniform Current Distribution
Room-temperature cw electrically pumped external-cavity surface-emitting laser diodes are reported. The external cavity provides a way to control the transverse modes of the surface-emitting laser diodes. Powers greater than 100 mW pulsed and 2.4 mW cw in the lowest order (TEM00) transverse mode are reported. The surface-emitting laser diode was grown on a p-doped substrate, resulting in uniform current injection in devices as large as 100 μm in diameter. To our knowledge, this is also the first report of a working surface-emitting laser diode grown on a p-type substrate.
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Anomalous temporal response of gain guided surface emitting lasers
Niloy K. Dutta, Li-Wei Tu, G. Hasnain et al. · Electronics Letters · 1991 · 81 citations