Radiation effects and defects in solids · 2011 · 14 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDefects In Electronic MaterialsRadiation Damage In MaterialsSemiconductor DefectsTransmission Electron MicroscopyWide Band Gap SemiconductorsWide-bandgap SemiconductorsDefect Evolution Under IrradiationDefect FormationEpitaxial DefectsEpitaxial MaterialsIon Irradiation DamageMicrostructureRadiation Damage MechanismsRadiation Defects
Abstract GaN epitaxial layers were irradiated with 200 MeV Ag ions at various fluences. These samples were characterized ex situ by resistivity/Hall, XRD, and transmission electron microscopy (TEM). The resistivity of irradiated layers increased by eight orders of magnitude after irradiation with a fluence of 5×1012 ions/cm2. The increase in peak width (FWHM) with the incident ion fluence showed a reduction in the crystallinity of epitaxial layers. Cross-sectional TEM images confirmed that at the highest fluence (5×1012 ions/cm2), electronic energy loss caused structural defect formation in the GaN layer. Keywords: GaNswift heavy ionsdefectsXRDhall/resistivityTEM Acknowledgements Mr Ashish Kumar would like to gratefully acknowledge the University Grant Commission (UGC) for providing a research fellowship. We are thankful to Dr R. Scholz from the Max Planck Institute for Microstructure Physics, Halle, Germany, for performing TEM measurements.
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Damage buildup in GaN under ion bombardment
S. O. Kucheyev, J. S. Williams, C. Jagadish et al. · Physical review. B, Condensed matter · 2000 · 192 citations
Lattice damage produced in GaN by swift heavy ions
S. O. Kucheyev, H. Timmers, Jin Zou et al. · Journal of Applied Physics · 2004 · 93 citations · Full text