Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

Kelvin probe force microscopy

M. Nonnenmacher, M. O’Boyle, H. K. Wickramasinghe · Applied Physics Letters · 1991 · 2.3K citations

Natural Sciences, Materials Engineering, Materials Science +17

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1996 · 1.2K citations

Engineering, Electrical Engineering, Materials Science +17

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of Luminescence from InGaN Diodes

K.P. O’Donnell, Robert Martin, P. G. Middleton · Physical Review Letters · 1999 · 490 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

X. H. Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 458 citations

Engineering, Materials Engineering, Materials Science +17