Applied Physics Letters · 2008 · 221 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials PhysicsSemiconductor MaterialsThin FilmsDielectricsFerroelectric MaterialsIii-v SemiconductorsOxide SemiconductorsPiezoelectric MaterialsFerroelectric Thin FilmsFerroelectricityPermittivityPiezoelectric CoefficientsPiezoelectric PropertiesPiezoelectricitySpontaneous PolarizationThin-film Piezoelectrics
A giant electromechanical d33 coefficient 110pC∕N is obtained in ferroelectric V-doped ZnO films, which is nearly one order of magnitude higher than that of undoped samples. It is considered that the switchable spontaneous polarization induced by V dopants and the accompanying relatively high permittivity should be responsible for the enhancement of piezoelectric response. Moreover, from another point of view, an easier rotation of V–O bonds which are noncollinear with c axis under electric field might be the microscopic origin of this anomaly. The improved piezoelectric properties could make V-doped ZnO a promising candidate for piezoelectric devices.
17