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Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films
219
Citations
17
References
2008
Year
Materials SciencePiezoelectric DevicesPiezoelectric ResponseElectronic MaterialsEngineeringFerroelectric ApplicationOxide ElectronicsApplied PhysicsFerroelectric MaterialsFerroelectric VanadiumPiezoelectric MaterialsElectric FieldPiezoelectricityPiezoelectric MaterialThin FilmsFunctional Materials
A giant electromechanical d33 coefficient 110pC∕N is obtained in ferroelectric V-doped ZnO films, which is nearly one order of magnitude higher than that of undoped samples. It is considered that the switchable spontaneous polarization induced by V dopants and the accompanying relatively high permittivity should be responsible for the enhancement of piezoelectric response. Moreover, from another point of view, an easier rotation of V–O bonds which are noncollinear with c axis under electric field might be the microscopic origin of this anomaly. The improved piezoelectric properties could make V-doped ZnO a promising candidate for piezoelectric devices.
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