High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate

Abstract

High power and high efficiency semipolar (3031) nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of <1 nm was observed between 5–100 mA, in comparison to large blueshifts in c -plane LEDs. The output power and external quantum efficiency (EQE) of the packaged 200 ×500 µm 2 was 14.48 mW and 26.5%, respectively, at 20 mA.