Kinetics of solid phase interaction between Al and <i>a</i>-Si:H

Abstract

The kinetics of solid phase interaction between Al and a-Si:H have been investigated. The experiment led to the observation of low-temperature crystallization as has been reported. The crystallization temperature was found to be 300–350 °C from diffraction studies. From the x-ray photoelectron spectroscopy study, electron transfer from Al to Si was observed in the intermixing layer in samples annealed at RT and 200 °C whereas there is no evidence of the electron transfer for 300 and 350 °C annealed samples. To explain these results, a comparison is made with the interaction in the Cr/a-Si:H system previously reported and the interdiffusion model is proposed.