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Negative differential resistance at 300 K in a superlattice quantum state transfer device
45
Citations
2
References
1984
Year
Categoryquantum ElectronicsQuantum ScienceConventional Superlattice DevicesSuperconducting MaterialEngineeringPhysicsNanoelectronicsQuantum DeviceApplied PhysicsQuantum MaterialsCondensed Matter PhysicsSuperconductivityBilevel SuperlatticeBilevel Superlattice StructureSuperconducting DevicesTopological HeterostructuresNegative Differential Resistance
Negative differential resistance has been observed at 300 K in a bilevel superlattice structure. Additional experimental data from conventional superlattice devices verify that this negative resistance is due to transitions in the bilevel superlattice. These devices demonstrate that the Hess real space transfer effect can be extended to the quantum well regime.
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