The epitaxial growth of zinc sulphide on silicon by vacuum evaporation

Abstract

Epitaxial layers, up to 5 μm thick, of zinc sulphide have been grown on thermally cleaned (111) surfaces of single-crystal silicon disks. The layers have been shown by x-ray and electron diffraction to be single-crystal and a continuation of the silicon lattice. The importance of producing a clean silicon surface and of maintaining constant temperatures during the deposition has been demonstrated.