Concepedia

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

J. D. Benson, L. O. Bubulac, Peter J. Smith, R. N. Jacobs, J. K. Markunas, M. Jaime-Vasquez, L. A. Almeida, A. J. Stoltz, P. S. Wijewarnasuriya, G. Brill,

Journal of Electronic Materials · 2010 · 32 citations · 19 references

DOI

Concepts

References

19

Electrostatic force microscopy: principles and some applications to semiconductors

Paul Girard · Nanotechnology · 2001 · 288 citations

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Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy

W. J. Everson, Christopher Ard, J. L. Sepich et al. · Journal of Electronic Materials · 1995 · 149 citations

, , +7

Electrically Active Stacking Faults in Silicon

K. V. Ravi, C. J. Varker, C. E. Volk · Journal of The Electrochemical Society · 1973 · 87 citations

, , +16

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Nibir K. Dhar, P. R. Boyd, M. Martinka et al. · Journal of Electronic Materials · 2000 · 55 citations

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HgCdTe/Si materials for long wavelength infrared detectors

S. M. Johnson, A. A. Buell, M. F. Vilela et al. · Journal of Electronic Materials · 2004 · 36 citations

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