Applied Physics Letters · 1980 · 26 citations · 4 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor MaterialsLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsOptical ResonatorsSemiconductor LasersSilicon PhotonicsDiode-based OscillatorsImpatt DiodesInjection LockingSemiconductor Laser DiodesSilicon-based Oscillators
An experimental study on optical injection locking of X-band silicon IMPATT oscillators was carried out. The locking process was achieved by modulating a cw GaAlAs laser at subharmonics of the IMPATT oscillation frequency and optically injected into the IMPATT diode. A locking range of several megahertz can be obtained at frequency ratios ranging from 4:1 to 8:1.
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Avalanche diode structures suitable for microwave-optical interactions
A. M. Schweighart, H. P. Vyas, J.M. Borrego et al. · Solid-State Electronics · 1978 · 18 citations