Publication | Closed Access
Formation and characterization of grain-oriented VO2 thin films
171
Citations
20
References
1989
Year
Optical MaterialsEngineeringIi-vi SemiconductorOptical Switching PerformanceThin Film ProcessingMaterials ScienceMaterials EngineeringPhysicsSemiconductor MaterialLayered MaterialGrain-oriented FilmsSurface ScienceApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresThin FilmsTopological HeterostructuresChemical Vapor DepositionFilm Orientation
Grain-oriented films of VO2 have been prepared to characterize the effects of film orientation on electrical and optical switching performance. This oriented growth has been achieved by lattice matching to (0001) sapphire, and results in intergranular structures favorable to rapid propagation of the monoclinic-tetragonal phase transformation. The electrical and optical property changes across this transition are strongly affected by film microstructure, with the oriented structures favoring rapid switching and narrow hysteresis.
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