Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE

Abstract

The desorption of Ga atoms from GaAs films at high substrate temperatures was utilized as an etch-back method for the reduction of highly-resistive layers formed around growth-interrupted interfaces in Si-doped GaAs. The mechanism of the reduction of the highly-resistive layer was studied by a C-V carrier profiling technique, secondary-ion mass spectroscopy and deep-level transient spectroscopy, and was clarified as being due to compensation by Si atoms accumulated on the GaAs surface during the thermal etching procedure.