Physical Review · 1965 · 31 citations · 22 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSpectroscopyAtomic ExcitationDefects In Electronic MaterialsElectronic Band StructureSelection RulesDeformation Potential TheoryEffective MassEffective Mass ApproximationExcitationImpurity StatesStrain EffectsUniaxial Strain
The effect of uniaxial stress on the excitation spectrum of arsenic impurity in germanium has been studied for compression along the simple directions [111], [110], and [100] using polarized light. The results can be understood in the framework of the effective-mass theory of Kohn and Luttinger and the deformation-potential theory. Selection rules for the observed transitions have been deduced from symmetry arguments. However, actual calculations of relative intensities of transitions are also given. Qualitative comparison of the latter with the observations gives good agreement.
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Transport Properties of a Many-Valley Semiconductor
Conyers Herring · Bell System Technical Journal · 1955 · 545 citations
Thermal Expansion of Some Crystals with the Diamond Structure
D. F. Gibbons · Physical Review · 1958 · 296 citations