Theoretical studies of the intrinsic quality of GaAs/AlGaAs interfaces grown by MBE: Role of kinetic processes

Abstract

We present a model for the growth of III–V compound semiconductors by molecular beam epitaxy which is based on an atomistic Monte Carlo simulation and a statistical fluctuation theory. This model allows one to understand the microscopic nature of the growth front and the interface as well as to identify the critical kinetic parameters responsible for their quality. We find that under normally employed growth conditions the cation surface migration rate is the most important parameter in controlling the surface and interface quality.