Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

Abstract

Nanosecond resolution time-resolved x-ray diffraction measurements have been used to study the temperature and temperature gradients in 〈100〉 and 〈111〉 oriented silicon crsytals during pulsed laser annealing. Thermal strain analysis of time-resolved extended Bragg scattering has shown the lattice temperature to reach the melting point during 15-ns, 1.5-J/cm2 ruby laser pulses and to remain at the melting point during the high reflectivity phase (HRP). The temperature gradients at the liquid-solid interface were found to be in the range of ∼107 K/cm during the HRP.