Molecular-beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates

Abstract

We report the growth by molecular-beam epitaxy of GaAsSb crystals on GaAs (100) substrates. The composition of the alloyed crystals has been strongly dependent on the growth condition, especially on the substrate temperature and the arrival rates of arsenic and antimony molecules. Raman scattering measurements have been performed to characterize the grown layers, GaAsSb, and GaSb on GaAs substrates. In the GaSb/GaAs grown at relatively high temperatures, we observe the variation of composition near the heterointerface.