High-speed thin-film transistor on flexible substrate fabricated at room temperature

Abstract

A high-speed thin-film transistor (TFT) on a regular transparency film is reported. The TFT was fabricated at room temperature using an electronic-grade carbon nanotube solution. The TFT shows a high field-effect mobility of ∼47 662 cm2/Vs and a large current carrying capacity of ∼30 mA. A high operation frequency exceeding 150 MHz has been demonstrated at a low gate voltage of a few volts. Such a TFT would be a critical building block for low-cost, large-area, and high-speed flexible printed electronics.