High emission current double-gated field emitter arrays

Abstract

To realize a high current under focusing operation we investigated the structure of double-gated field emitter arrays (FEAs) and tried to anodize the tip of the silicon emitters. It was found from these investigations that the FEAs with the thick extraction gate could maintain high emission current during focusing operation. Furthermore, the anodized Si FEAs with thick extraction gate achieved a high emission current per tip of about 300 nA under focusing operation.