Ambipolar Field‐Effect Transistor (FET) and Redox Characteristics of a <i>π</i>‐Conjugated Thiophene/1,3,4‐Thiadiazole CT‐Type Copolymer

Abstract

Abstract Summary: A π ‐conjugated charge transfer‐type copolymer consisting of an electron‐donating thiophene and an electron‐accepting 1,3,4‐thiadiazole, P(ThdzTh), underwent facile electrochemical p ‐ and n ‐doping, as revealed by cyclic voltammetry. The copolymer gave a new ambipolar field‐effect transistor (FET), which showed typical I DS (source–drain current)– V DS (source–drain voltage) curves in both a p ‐type working mode and an n ‐type working mode. In the n ‐type working mode, the polymer showed a carrier mobility of about 5 × 10 −3 cm 2 · V −1 · s −1 and an on/off ratio of about 3 × 10 4 . n ‐Channel field‐effect transistor characteristics of P(ThdzTh). magnified image n ‐Channel field‐effect transistor characteristics of P(ThdzTh).