Interstitial doping of amorphous silicon

Abstract

Interstitial doping of glow-discharge a-Si has been achieved by in-diffusion and implantation of lithium. After doping with about 1% Li, we observe an increase of room-temperature conductivity by a factor of 106 and a decrease in the activation energy of conductivity down to 0.17 eV. Corresponding changes are observed for the thermoelectric power which, as expected for n-type material, has a negative sign.