Applied Physics Letters · 2008 · 30 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor DevicesCarbon NanomaterialsConductive MaterialsElectrolyte MaterialsMemory DevicesMemristive MaterialsSemiconductor Device MaterialsDegradationElectrolytesNonvolatile MemoryNonvolatile Memory DevicesResistive SwitchingResistive Switching MaterialsRetention CharacteristicsSwitching Devices
We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such as a high resistance ratio of over two orders, higher operation voltage, and high temperature retention characteristics. Using 1000 cell array devices, we have also confirmed uniform distributions of resistance and switching voltages. Both high and low resistance states showed negligible degradation of resistance for over 104 s at 85 °C, confirming good retention characteristics.
13
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
Nanometer-scale switches using copper sulfide
Toshitsugu Sakamoto, H. Sunamura, H. Kawaura et al. · Applied Physics Letters · 2003 · 514 citations