Applied Physics Letters · 2006 · 302 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceElectrochemistryNanotechnologySemiconductor MaterialsElectrochemical Impedance SpectroscopyElectrode MaterialsImpedance SpectroscopyMetal Oxide NanomaterialsOxide SemiconductorsSemiconductor NanomaterialsCharge Carrier DensityElectrochemical Impedance AnalysisElectronic Properties Of Metal Oxide NanostructuresNanostructured Electrode MaterialsNanowire CharacterizationOxide NanowiresSemiconductor NanowiresZinc Oxide Nanostructures
The carrier density of ZnO nanowires has been determined by means of electrochemical impedance spectroscopy. A model taking into account the geometry of ZnO nanowires has been developed and the differences with the standard flat model, as curved Mott-Schottky plots, are discussed. The as-grown electrodeposited samples present a high donor density of 6.2×1019cm−3, dramatically reduced by two orders of magnitude after an annealing in air at 450°C during 1h. The results show that the surface of the ZnO nanowires is active; therefore this system appears as a useful structure to support a functionalized nanostructured devices.
23
Nanowire dye-sensitized solar cells
Matt Law, Lori E. Greene, Justin C. Johnson et al. · Nature Materials · 2005 · 5.3K citations
Natural Sciences, Materials Engineering, Materials Science +12
First-principles study of native point defects in ZnO
A. F. Kohan, Gerbrand Ceder, Dane Morgan et al. · Physical review. B, Condensed matter · 2000 · 1.7K citations
Residual Native Shallow Donor in ZnO
D. C. Look, J. W. Hemsky, J. R. Sizelove · Physical Review Letters · 1999 · 1.1K citations
Natural Sciences, Materials Engineering, Materials Science +9