Epitaxial Deposition of Silicon in Deep Grooves

Abstract

An epitaxial silicon growth technique to preferentially deposit into and refill deep, vertically walled, orientation‐dependent etched grooves in (110) silicon was developed. All of the common silicon chlorides can be used with the addition of to the deposition system. A mask on the top surface of the substrate is not needed with this selective deposition technique. After refill of the deep grooves, even with variable depths, a planar surface is created. A thermodynamic analysis of the experimental conditions was carried out, and it shows that all of the various experimental conditions successfully used are about equally shifted from equilibrium.