Dynamic FET model - DynaFET - for GaN transistors from NVNA active source injection measurements

Abstract

A complete nonlinear characterization and modeling flow for modern GaN transistors is presented. Features include a new active-source injection based waveform measurement HW/SW system built around an NVNA, an extended artificial neural network (ANN) training infrastructure for coupled electro-thermal and trap-dependent model constitutive relations, and the native implementation in a commercial simulator. The model is validated by detailed comparisons to measured data for an advanced mm-wave 150 nm 6×60μm GaN HFET manufactured by Raytheon Integrated Defense Systems. Excellent results are achieved for DC, S-parameters, harmonic and intermodulation distortion, and load-pull figures of merit, over a very wide range of bias conditions, complex loads, powers, and frequencies.