Apparent low-frequency charge capacitance of semiconducting boron

Abstract

The low-frequency charge capacitance for semiconductor boron samples proves to be ten times higher in comparison with the geometrical value calculated from the sample sizes under the assumption of material homogeneity. The explanation to the observable stepwise behavior for the capacitance temperature dependence can be found on the basis of the generalized barrier model for a inhomogeneous semiconductor within the context of its three-layer variant. It seems that the planar defects characteristic of real boron crystals generate elastic stresses, which are sufficiently high for a local decrease in conductivity. In addition, the low-conductivity barrier layers should also arise at the interfaces of similar inclusions with a relatively high-conductivity matrix.