Annealing of damage and redistribution of Cr in boron-implanted Si3N4-capped GaAs

Abstract

Transmission electron microscopy and secondary-ion mass spectrometry have been used to determine the relative roles of encapsulant stress and implantation damage in the thermal redistribution of chromium. At low temperatures (500 °C), there is a plantation damage, while the encapsulant stress becomes predominant at higher temperatures.