Publication | Closed Access
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)
24
Citations
16
References
2009
Year
Materials ScienceEngineeringSelective Area GrowthApplied PhysicsComplete Crystallographic StudyAluminum Gallium NitrideGan Epitaxial MorphologiesMolecular Beam EpitaxyEpitaxial Growth
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