Applied Physics Letters · 2010 · 67 citations · 22 references
EngineeringMaterials ScienceMicrofabricationOptoelectronicsPhotonicsOptical ResonatorsOptoelectronic DevicesOxide SemiconductorsQuantum ConfinementSemiconductor LasersSemiconductor NanomaterialsCharge Carrier DensityExcitationInterferenceLaser ThresholdMicrocavity LasersMott TransitionWhispering-gallery-mode ResonatorsZinc Oxide Nanostructures
Dodecagonal ZnO microrods were fabricated by vapor transport method. A dodecagonal ZnO microrod with diameter of 6.35 μm was employed as a whispering gallery mode microcavity, the low threshold exciton lasing was stimulated. In another smaller microrod, the electron-hole plasma lasing was observed under intense excitation as the carrier density was larger than the Mott transition density. The interference condition in the dodecagonal cavity was deduced, and the mode structures were investigated. Compared to the hexagonal microcavity with same diameter, the dodecagonal microcavity has higher lasing performance.
22
Room-Temperature Ultraviolet Nanowire Nanolasers
Michael H. Huang, Samuel S. Mao, H. Feick et al. · Science · 2001 · 8.9K citations
Natural Sciences, Materials Engineering, Materials Science +17
Random Laser Action in Semiconductor Powder
Hui Cao, Yuxia Zhao, Seng Tiong Ho et al. · Physical Review Letters · 1999 · 1.7K citations
High temperature excitonic stimulated emission from ZnO epitaxial layers
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1998 · 783 citations