Applied Physics Letters · 1975 · 10 citations · 1 references
EngineeringElectrical EngineeringMaterials EngineeringMicroelectronicsMicrofabricationSemiconductor DevicesCmos Circuit DesignIntegrated Circuit DesignIntegrated Circuit FabricationSemiconductor Device MaterialsSilicon MaterialsVery-large-scale Integration LayoutPolysiliconPolysilicon ProcessingProcessingSiliconSilicon Device MaterialsSilicon MicrostructuresSilicon Wafer Processing
A new method of making fine geometry polysilicon lines has been developed. It requires no special apparatus or critical processing. Silicon gate MOST’s with dimensions of about 1 μm have been fabricated. Applications of the fine geometry MOST’s to the fabrication of high−packing−density MOSIC’s and high−frequency transistors are outlined.
1