Electronics Letters · 1982 · 12 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsSemiconductor LasersWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCurrentsDiode Laser Threshold CurrentExternal-cavity LasersFabricationIntegrated Semiconductor LasersQuantum Well Laser DiodesSemiconductor Laser DiodesSemiconductor Laser Fabrication
InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 μm and 1.3 μm wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.
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High temperature single-mode cw operation with a junction-up TJS laser
H. Kumabe, Toshio Tanaka, H. Namizaki et al. · Applied Physics Letters · 1978 · 55 citations
InGaAsP/InP dual wavelength lasers
Shiro Sakai, T. Aoki, M. Umeno · Electronics Letters · 1982 · 22 citations
A new InGaAsP/InP dual-wavelength LED
Shiro Sakai, Takahiro Aoki, Yoshifumi Amemiya et al. · Applied Physics Letters · 1979 · 16 citations