Japanese Journal of Applied Physics · 1979 · 11 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesLaser OpticsLaser PhysicsSemiconductor LasersThermal Properties Of SemiconductorsSingle-mode LasersSingle-mode OperationSingle-mode Semiconductor LasersTemperature DependenceThreshold Current Reduction
A new laser which has the simplest TJS structure on a semi-insulating GaAs substrate has been developed. Due to elimination of shunt current, the minimum threshold current has decreased to be as low as 12 mA. The temperature dependence of the threshold current has also much improved. The new laser mounted upside up operates continuously up to 110°C in a single longitudinal and fundamental transverse mode. The estimated lifetime of the lasers is more than 105 hours at 25°C.