IEEE Electron Device Letters · 1980 · 18 citations · 3 references
Materials ScienceDevice ModelingElectrical EngineeringMaterials EngineeringEngineeringResistorPhysicsSpecific ResistanceNanoelectronicsFet Gate MetallizationApplied PhysicsMetallurgical InteractionFet Gate StripeMicroelectronicsForward BiasesGate JunctionSemiconductor Device
The resistance of the metallization of a FET gate stripe has the effect of placing a non-linear resistance R(I) in series with the gate junction. A simple means of calculating R(I) is developed, and a curve of the drop across R(1) at milliampere forward biases is given.
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