IEEE Microwave and Wireless Components Letters · 2001 · 77 citations · 10 references
EngineeringElectrical EngineeringMicroelectromechanical SystemsMicroelectronicsMicrowave EngineeringIntegrated Circuit DesignMems DesignMems SwitchesMicrowave Integrated CircuitsRf MemsCapacitanceCapacitive Mems SwitchesCapacitive Rf Mems SwitchesFabricationMicroelectromechanical SwitchesRf Mems SwitchesRf SwitchesSwitch Fabrication Processes
This paper presents a novel all-metal series switch with several different pull-down electrode geometries. The switch results in an up-state capacitance of 5-9 fF and an isolation of -25 to -30 d8 at 10 GHz. The fabrication process is completely compatible with the standard capacitive (or dc-contact) shunt switch, A dc-30 GHz series/shunt switch is also presented with an isolation of -60 dB at 5 GHz and -42 dB at 10 GHz. This is the highest isolation switch available to-date. The performance is limited by radiation in the CPW lines and not by the series/shunt switch characteristics. The application areas are in high-isolation switches for basestations and satellite systems.
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Performance of low-loss RF MEMS capacitive switches
Charles L. Goldsmith, Zhimin Yao, S. Eshelman et al. · IEEE Microwave and Guided Wave Letters · 1998 · 428 citations