Concepedia

<i>Q</i> switching of low-threshold buried-heterostructure diode lasers at 10 GHz

D. Z. Tsang, J. N. Walpole, Z. L. Liau, S. H. Groves, V. Diadiuk

Applied Physics Letters · 1984 · 27 citations · 6 references

DOI

Concepts

Abstract

Buried-heterostructure actively Q-switched diode lasers have been made with threshold currents as low as 14 mA. The lasers operate continuously at room temperature. Modulation has been observed at rates up to 10.5 GHz. Evidence of several modes of Q switching has been obtained.

References

6

A novel technique for GaInAsP/InP buried heterostructure laser fabrication

Z. L. Liau, J. N. Walpole · Applied Physics Letters · 1982 · 83 citations

, , +17

Electroabsorption in GaInAsP

Robert H. Kingston · Applied Physics Letters · 1979 · 44 citations

, , +17

Self- <i>Q</i> -switched picosecond optical pulse generation with tandem-type AlGaAs TJS laser

Hiromasa Ito, N. Onodera, K. Gen-ei et al. · Electronics Letters · 1981 · 41 citations

, , +16

Q-switched semiconductor diode lasers

D. Z. Tsang, J. N. Walpole · IEEE Journal of Quantum Electronics · 1983 · 40 citations

, , +16

Intracavity loss modulation of GaInAsP diode lasers

D. Z. Tsang, J. N. Walpole, S. H. Groves et al. · Applied Physics Letters · 1981 · 30 citations

, , +17