Publication | Closed Access
<i>Q</i> switching of low-threshold buried-heterostructure diode lasers at 10 GHz
27
Citations
6
References
1984
Year
Semiconductor TechnologyPhotonicsElectrical EngineeringRoom TemperatureEngineeringLaser SciencePhysicsSemiconductor LasersRf SemiconductorQ SwitchingApplied PhysicsLaser ApplicationsOptoelectronic DevicesOptical SwitchingThreshold CurrentsOptoelectronicsSemiconductor Device
Buried-heterostructure actively Q-switched diode lasers have been made with threshold currents as low as 14 mA. The lasers operate continuously at room temperature. Modulation has been observed at rates up to 10.5 GHz. Evidence of several modes of Q switching has been obtained.
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