Monoatomic Layer Electronics Constructed by Graphene and Boron Nitride Nanoribbons

Abstract

A new and simple kind of heterostructure nanoelectronics, which are free of metal electrodes, is constructed by a boron nitride nanoribbon (BNNR) seamlessly connected between two pieces of graphene nanoribbons (GNRs). The electron transport properties of devices based on such GNR-BNNR-GNR heterostructures are systematically investigated. The effects of vacancy, chirality, width, and boundary of nanoribbons on the electron transport properties of these devices are discussed. Energy gaps over 1 eV are observed in the electron transmission spectra of devices composed of these heterojunctions, indicating their pronounced field effect transistor (FET) characters. Removing hydrogen atoms at the boron edge of zigzag BNNR can result in 100% electron spin polarization in the GNR-BNNR-GNR FET. This study has implications for developing high-performance monatomic layer nanoelectronics with simple heterojunctions.