High CW power narrow-spectral width (< 1.5 Å)980 nm broad-stripe distributed-feedbackdiode lasers

C-M. Chang, T. Earles, D. Botez

Electronics Letters · 2000 · 15 citations · 4 references

Concepts

Abstract

100 µm-stripe, broad-waveguide InGaAs/InGa(As)P/GaAs DFB diode lasers (λ = 976 nm) have been realised which exhibit narrow spectral widths (full width at half maximum) of 0.5 and 1.3 Å at CW powers of 0.5 and 1 W, respectively. 5/95% facet-coated devices have been realised which have an external differential quantum efficiency of 52% and a wallplug efficiency of 33% at 1 W.

References

4