Electronics Letters · 2000 · 15 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsQuantum OptoelectronicsSemiconductor LasersDifferential Quantum EfficiencyDistributed Feedback LasersExternal Quantum EfficiencyFull Width At Half MaximumHigh-power Laser DiodesHigh-power Semiconductor LasersQuantum EfficiencySemiconductor Laser Diodes
100 µm-stripe, broad-waveguide InGaAs/InGa(As)P/GaAs DFB diode lasers (λ = 976 nm) have been realised which exhibit narrow spectral widths (full width at half maximum) of 0.5 and 1.3 Å at CW powers of 0.5 and 1 W, respectively. 5/95% facet-coated devices have been realised which have an external differential quantum efficiency of 52% and a wallplug efficiency of 33% at 1 W.
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