Influence of pressure on the mobility in heavily doped n‐type indium antimonide

Abstract

Abstract The resistivity ϱ of n‐type InSb doped with Te, Se, and S was measured as a function of the hydrostatic pressure up to 12 kbar, at 77 and 300 °K. We observed that samples doped with different impurities have different ϱ(P) dependences. The experimental results were compared with theoretical calculations based on the papers of Korenblit and Shestobitov [2] and Zawadzki and Szymańska [3]. The agreement between theory and experiment is good for Te‐doped samples and is highly unsatisfactory for S‐ and Se‐doped samples. It is suggested that the discrepancies of the latter are caused by the existence of short‐range potential centres in S‐ and Se‐doped samples.