IEEE Transactions on Nuclear Science · 1983 · 41 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsLow-noise Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesAnalog Pulse ProcessingCapacitanceField-effect Transistor BiasingLow-noise DesignNoise In Bipolar Junction TransistorsNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsNoise Limits In Semiconductor Devices
Theoretical and experimental investigation has been carried out to determine the best working conditions of single or parallel combinations of field-effect or bipolar transistors in low noise preamplifiers for processing times in the 10 ns range. The effects of diffusion capacitance and base spreading resistance in bipolar transistors have been put into evidence and a way of reducing the noise due to the latter is suggested and experimentally demonstrated.
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Input Amplifiers for Optical PCM Receivers
J. E. Goell · Bell System Technical Journal · 1974 · 59 citations