Electronics Letters · 1983 · 104 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesOptoelectronic DevicesPhotodetectorsSemiconductor DetectorsSemiconductor HeterostructuresBandwidthMode-locked LasersPhotodetector BandwidthSchottky Barrier CharacteristicsSchottky Barrier DetectorsSchottky Barrier DiodesSchottky Barrier PhotodetectorsSchottky Photodetectors
In the letter we report the development and characterisation of a planar-structure GaAs Schottky-barrier photodiode whose response to a mode-locked laser pulse of 600 nm wavelength has a full-width half-maximum of 5.4 ps and a 3 dB bandwidth of 100 GHz.
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Conference on lasers and electro-optics 82
SLB · Optics & Laser Technology · 1982 · 1.3K citations
Picosecond electro-optic sampling system
J. A. Valdmanis, G. Mourou, C. W. Gabel · Applied Physics Letters · 1982 · 354 citations · Full text
20-GHz bandwidth GaAs photodiode
Shih-Yuan Wang, D. M. Bloom, D. M. Collins · Applied Physics Letters · 1983 · 55 citations