Journal of Applied Physics · 1958 · 43 citations · 2 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSolid State PhysicsDefects In Electronic MaterialsElectrical ConductivityIii-v SemiconductorsRare-earth-doped MaterialsGermanium Device MaterialsResistivity
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation F. A. Trumbore, A. A. Tartaglia; Resistivities and Hole Mobilities in Very Heavily Doped Germanium. J. Appl. Phys. 1 October 1958; 29 (10): 1511. https://doi.org/10.1063/1.1722978 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search
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