SIT Image sensor: Design considerations and characteristics

Abstract

This paper concerns a new solid-state imaging device using a static induction transistor (SIT). The device has a single SIT/pixel structure previously proposed by Nishizawa et al. The authors developed a new serial readout area array configuration suitable for standard TV format, and its operational characteristics have been analyzed using a simplified model. Image sensors consisting of 170(H) × 124(V) pixels were fabricated using a combined SIT and MOS process, and their measured characteristics agree well with the analysis. Signal current as large as 94 µA was obtained at an exposure value of 0.17 lx . s without any output amplifier, and it is expected that sensitivity will be improved with a decrease in the charge storage capacitance of the SIT gate.